IPD50N06S4L08ATMA2 by Infineon Technologies – Specifications

Infineon Technologies IPD50N06S4L08ATMA2 is a IPD50N06S4L08ATMA2 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 50A 7.8mΩ@50A,10V 71W 2.2V@35uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 50A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.8mΩ@50A,10V
  • Power Dissipation (Pd): 71W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@35uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.78nF@25V
  • Total Gate Charge (Qg@Vgs): 64nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.42 grams.

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Full Specifications of IPD50N06S4L08ATMA2

Model NumberIPD50N06S4L08ATMA2
Model NameInfineon Technologies IPD50N06S4L08ATMA2
CategoryMOSFETs
BrandInfineon Technologies
Description60V 50A 7.8mΩ@50A,10V 71W 2.2V@35uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.420 grams / 0.014815 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)50A
Drain Source On Resistance (RDS(on)@Vgs,Id)7.8mΩ@50A,10V
Power Dissipation (Pd)71W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@35uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.78nF@25V
Total Gate Charge (Qg@Vgs)64nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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