IPD50P04P4L11ATMA2 by Infineon Technologies – Specifications

Infineon Technologies IPD50P04P4L11ATMA2 is a IPD50P04P4L11ATMA2 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 50A 58W 10.6mΩ@50A,10V 2.2V@85uA 1PCSPChannel TO-252-3-313 MOSFETs ROHS. This product comes in a TO-252-3-313 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 50A
  • Power Dissipation (Pd): 58W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10.6mΩ@50A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@85uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 3.9nF@25V
  • Total Gate Charge (Qg@Vgs): 59nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.2 grams.

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Full Specifications of IPD50P04P4L11ATMA2

Model NumberIPD50P04P4L11ATMA2
Model NameInfineon Technologies IPD50P04P4L11ATMA2
CategoryMOSFETs
BrandInfineon Technologies
Description40V 50A 58W 10.6mΩ@50A,10V 2.2V@85uA 1PCSPChannel TO-252-3-313 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.200 grams / 0.007055 oz
Package / CaseTO-252-3-313
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)50A
Power Dissipation (Pd)58W
Drain Source On Resistance (RDS(on)@Vgs,Id)10.6mΩ@50A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@85uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)3.9nF@25V
Total Gate Charge (Qg@Vgs)59nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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