IPD50R2K0CE by Infineon Technologies – Specifications

Infineon Technologies IPD50R2K0CE is a IPD50R2K0CE from Infineon Technologies, part of the MOSFETs. It is designed for 500V 3.6A 1.8Ω@13V,600mA 33W 3V@50uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 3.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.8Ω@13V,600mA
  • Power Dissipation (Pd): 33W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@50uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 124pF@100V
  • Total Gate Charge (Qg@Vgs): 6nC@0~10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.37 grams.

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Full Specifications of IPD50R2K0CE

Model NumberIPD50R2K0CE
Model NameInfineon Technologies IPD50R2K0CE
CategoryMOSFETs
BrandInfineon Technologies
Description500V 3.6A 1.8Ω@13V,600mA 33W 3V@50uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.370 grams / 0.013051 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)3.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.8Ω@13V,600mA
Power Dissipation (Pd)33W
Gate Threshold Voltage (Vgs(th)@Id)3V@50uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)124pF@100V
Total Gate Charge (Qg@Vgs)6nC@0~10V
Operating Temperature-55℃~+150℃@(Tj)

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