IPD50R2K0CEAUMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD50R2K0CEAUMA1 is a IPD50R2K0CEAUMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 500V 2.4A 2Ω@600mA,13V 33W 3.5V@50uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 2.4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2Ω@600mA,13V
  • Power Dissipation (Pd): 33W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@50uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 124pF@100V
  • Total Gate Charge (Qg@Vgs): 6nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPD50R2K0CEAUMA1

Full Specifications of IPD50R2K0CEAUMA1

Model NumberIPD50R2K0CEAUMA1
Model NameInfineon Technologies IPD50R2K0CEAUMA1
CategoryMOSFETs
BrandInfineon Technologies
Description500V 2.4A 2Ω@600mA,13V 33W 3.5V@50uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)2.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)2Ω@600mA,13V
Power Dissipation (Pd)33W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@50uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)124pF@100V
Total Gate Charge (Qg@Vgs)6nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - IPD50R2K0CEAUMA1 With Other 200 Models

Related Models - IPD50R2K0CEAUMA1 Alternative

Scroll to Top