IPD50R650CE by Infineon Technologies – Specifications

Infineon Technologies IPD50R650CE is a IPD50R650CE from Infineon Technologies, part of the MOSFETs. It is designed for 500V 6.1A 650mΩ@13V,1.8A 69W 3.5V@150uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 6.1A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 650mΩ@13V,1.8A
  • Power Dissipation (Pd): 69W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@150uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPD50R650CE

Full Specifications of IPD50R650CE

Model NumberIPD50R650CE
Model NameInfineon Technologies IPD50R650CE
CategoryMOSFETs
BrandInfineon Technologies
Description500V 6.1A 650mΩ@13V,1.8A 69W 3.5V@150uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)6.1A
Drain Source On Resistance (RDS(on)@Vgs,Id)650mΩ@13V,1.8A
Power Dissipation (Pd)69W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@150uA
Type1PCSNChannel

Compare Infineon Technologies - IPD50R650CE With Other 200 Models

Related Models - IPD50R650CE Alternative

Scroll to Top