IPD50R650CEAUMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD50R650CEAUMA1 is a IPD50R650CEAUMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 500V 9A 650mΩ@1.8A,13V 69W 3.5V@150uA 1PCSNChannel TO-252-3-344 MOSFETs ROHS. This product comes in a TO-252-3-344 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 650mΩ@1.8A,13V
  • Power Dissipation (Pd): 69W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@150uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 342pF@100V
  • Total Gate Charge (Qg@Vgs): 15nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPD50R650CEAUMA1

Model NumberIPD50R650CEAUMA1
Model NameInfineon Technologies IPD50R650CEAUMA1
CategoryMOSFETs
BrandInfineon Technologies
Description500V 9A 650mΩ@1.8A,13V 69W 3.5V@150uA 1PCSNChannel TO-252-3-344 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3-344
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)9A
Drain Source On Resistance (RDS(on)@Vgs,Id)650mΩ@1.8A,13V
Power Dissipation (Pd)69W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@150uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)342pF@100V
Total Gate Charge (Qg@Vgs)15nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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