IPD50R800CEAUMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD50R800CEAUMA1 is a IPD50R800CEAUMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 500V 7.6A 60W 800mΩ@1.5A,13V 3.5V@130uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 7.6A
  • Power Dissipation (Pd): 60W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@1.5A,13V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@130uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 280pF@100V
  • Total Gate Charge (Qg@Vgs): 12.4nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPD50R800CEAUMA1

Model NumberIPD50R800CEAUMA1
Model NameInfineon Technologies IPD50R800CEAUMA1
CategoryMOSFETs
BrandInfineon Technologies
Description500V 7.6A 60W 800mΩ@1.5A,13V 3.5V@130uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)7.6A
Power Dissipation (Pd)60W
Drain Source On Resistance (RDS(on)@Vgs,Id)800mΩ@1.5A,13V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@130uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)280pF@100V
Total Gate Charge (Qg@Vgs)12.4nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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