IPD60R180C7 by Infineon Technologies – Specifications

Infineon Technologies IPD60R180C7 is a IPD60R180C7 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 13A 180mΩ@10V,5.3A 68W 4V@260uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 13A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 180mΩ@10V,5.3A
  • Power Dissipation (Pd): 68W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@260uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPD60R180C7

Full Specifications of IPD60R180C7

Model NumberIPD60R180C7
Model NameInfineon Technologies IPD60R180C7
CategoryMOSFETs
BrandInfineon Technologies
Description600V 13A 180mΩ@10V,5.3A 68W 4V@260uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)13A
Drain Source On Resistance (RDS(on)@Vgs,Id)180mΩ@10V,5.3A
Power Dissipation (Pd)68W
Gate Threshold Voltage (Vgs(th)@Id)4V@260uA
Type1PCSNChannel

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