IPD60R1K4C6 by Infineon Technologies – Specifications

Infineon Technologies IPD60R1K4C6 is a IPD60R1K4C6 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 3.2A 1.4Ω@10V,1.1A 28.4W 3.5V@90uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 3.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@10V,1.1A
  • Power Dissipation (Pd): 28.4W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@90uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.38 grams.

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Full Specifications of IPD60R1K4C6

Model NumberIPD60R1K4C6
Model NameInfineon Technologies IPD60R1K4C6
CategoryMOSFETs
BrandInfineon Technologies
Description600V 3.2A 1.4Ω@10V,1.1A 28.4W 3.5V@90uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.380 grams / 0.013404 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)3.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.4Ω@10V,1.1A
Power Dissipation (Pd)28.4W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@90uA
Type1PCSNChannel

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