IPD60R1K5CEAUMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD60R1K5CEAUMA1 is a IPD60R1K5CEAUMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 5A 49W 1.5Ω@1.1A,10V 3.5V@90uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 5A
  • Power Dissipation (Pd): 49W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.5Ω@1.1A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@90uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 200pF@100V
  • Total Gate Charge (Qg@Vgs): 9.4nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.557 grams.

More on IPD60R1K5CEAUMA1

Full Specifications of IPD60R1K5CEAUMA1

Model NumberIPD60R1K5CEAUMA1
Model NameInfineon Technologies IPD60R1K5CEAUMA1
CategoryMOSFETs
BrandInfineon Technologies
Description650V 5A 49W 1.5Ω@1.1A,10V 3.5V@90uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.557 grams / 0.019648 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)5A
Power Dissipation (Pd)49W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.5Ω@1.1A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@90uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)200pF@100V
Total Gate Charge (Qg@Vgs)9.4nC@10V
Operating Temperature-40℃~+150℃@(Tj)

Compare Infineon Technologies - IPD60R1K5CEAUMA1 With Other 200 Models

Related Models - IPD60R1K5CEAUMA1 Alternative

Scroll to Top