IPD60R360PFD7SAUMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD60R360PFD7SAUMA1 is a IPD60R360PFD7SAUMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 10A 43W 360mΩ@2.9A,10V 4.5V@140uA 1PCSNChannel TO-252-3-344 MOSFETs ROHS. This product comes in a TO-252-3-344 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 10A
  • Power Dissipation (Pd): 43W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 360mΩ@2.9A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@140uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 534pF@400V
  • Total Gate Charge (Qg@Vgs): 12.7nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.63 grams.

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Full Specifications of IPD60R360PFD7SAUMA1

Model NumberIPD60R360PFD7SAUMA1
Model NameInfineon Technologies IPD60R360PFD7SAUMA1
CategoryMOSFETs
BrandInfineon Technologies
Description650V 10A 43W 360mΩ@2.9A,10V 4.5V@140uA 1PCSNChannel TO-252-3-344 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.630 grams / 0.022223 oz
Package / CaseTO-252-3-344
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)10A
Power Dissipation (Pd)43W
Drain Source On Resistance (RDS(on)@Vgs,Id)360mΩ@2.9A,10V
Gate Threshold Voltage (Vgs(th)@Id)4.5V@140uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)534pF@400V
Total Gate Charge (Qg@Vgs)12.7nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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