Infineon Technologies IPD60R600CP is a IPD60R600CP from Infineon Technologies, part of the MOSFETs. It is designed for 600V 6.1A 600mΩ@3.3A,10V 60W 3.5V@220uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 6.1A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 600mΩ@3.3A,10V
- Power Dissipation (Pd): 60W
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@220uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 550pF@100V
- Total Gate Charge (Qg@Vgs): 27nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IPD60R600CP
Full Specifications of IPD60R600CP
Model Number | IPD60R600CP |
Model Name | Infineon Technologies IPD60R600CP |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 600V 6.1A 600mΩ@3.3A,10V 60W 3.5V@220uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-252-3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 600V |
Continuous Drain Current (Id) | 6.1A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 600mΩ@3.3A,10V |
Power Dissipation (Pd) | 60W |
Gate Threshold Voltage (Vgs(th)@Id) | 3.5V@220uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 550pF@100V |
Total Gate Charge (Qg@Vgs) | 27nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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