IPD60R650CEAUMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD60R650CEAUMA1 is a IPD60R650CEAUMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 9.9A 650mΩ@2.4A,10V 82W 3.5V@200uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 9.9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 650mΩ@2.4A,10V
  • Power Dissipation (Pd): 82W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@200uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 440pF@100V
  • Total Gate Charge (Qg@Vgs): 20.5nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.457 grams.

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Full Specifications of IPD60R650CEAUMA1

Model NumberIPD60R650CEAUMA1
Model NameInfineon Technologies IPD60R650CEAUMA1
CategoryMOSFETs
BrandInfineon Technologies
Description600V 9.9A 650mΩ@2.4A,10V 82W 3.5V@200uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.457 grams / 0.01612 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)9.9A
Drain Source On Resistance (RDS(on)@Vgs,Id)650mΩ@2.4A,10V
Power Dissipation (Pd)82W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@200uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)440pF@100V
Total Gate Charge (Qg@Vgs)20.5nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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