IPD65R1K0CE by Infineon Technologies – Specifications

Infineon Technologies IPD65R1K0CE is a IPD65R1K0CE from Infineon Technologies, part of the MOSFETs. It is designed for 650V 7.2A 68W 1Ω@10V,1.5A 3.5V@200uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 7.2A
  • Power Dissipation (Pd): 68W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1Ω@10V,1.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@200uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPD65R1K0CE

Full Specifications of IPD65R1K0CE

Model NumberIPD65R1K0CE
Model NameInfineon Technologies IPD65R1K0CE
CategoryMOSFETs
BrandInfineon Technologies
Description650V 7.2A 68W 1Ω@10V,1.5A 3.5V@200uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)7.2A
Power Dissipation (Pd)68W
Drain Source On Resistance (RDS(on)@Vgs,Id)1Ω@10V,1.5A
Gate Threshold Voltage (Vgs(th)@Id)3.5V@200uA
Type1PCSNChannel

Compare Infineon Technologies - IPD65R1K0CE With Other 200 Models

Related Models - IPD65R1K0CE Alternative

Scroll to Top