IPD65R1K4C6 by Infineon Technologies – Specifications

Infineon Technologies IPD65R1K4C6 is a IPD65R1K4C6 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 3.2A 1.4Ω@10V,1A 28W 3.5V@100uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 3.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@10V,1A
  • Power Dissipation (Pd): 28W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@100uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPD65R1K4C6

Full Specifications of IPD65R1K4C6

Model NumberIPD65R1K4C6
Model NameInfineon Technologies IPD65R1K4C6
CategoryMOSFETs
BrandInfineon Technologies
Description650V 3.2A 1.4Ω@10V,1A 28W 3.5V@100uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)3.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.4Ω@10V,1A
Power Dissipation (Pd)28W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@100uA
Type1PCSNChannel

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