IPD65R1K4C6ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD65R1K4C6ATMA1 is a IPD65R1K4C6ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 3.2A 28W 1.4Ω@1A,10V 3.5V@100uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 650V
• Continuous Drain Current (Id): 3.2A
• Power Dissipation (Pd): 28W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@1A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 3.5V@100uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 225pF@100V
• Total Gate Charge (Qg@Vgs): 10.5nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.