IPD65R400CE by Infineon Technologies – Specifications

Infineon Technologies IPD65R400CE is a IPD65R400CE from Infineon Technologies, part of the MOSFETs. It is designed for 650V 15.1A 400mΩ@10V,3.2A 118W 3.5V@320uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 15.1A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 400mΩ@10V,3.2A
  • Power Dissipation (Pd): 118W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@320uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.513 grams.

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Full Specifications of IPD65R400CE

Model NumberIPD65R400CE
Model NameInfineon Technologies IPD65R400CE
CategoryMOSFETs
BrandInfineon Technologies
Description650V 15.1A 400mΩ@10V,3.2A 118W 3.5V@320uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.513 grams / 0.018096 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)15.1A
Drain Source On Resistance (RDS(on)@Vgs,Id)400mΩ@10V,3.2A
Power Dissipation (Pd)118W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@320uA
Type1PCSNChannel

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