IPD65R420CFD by Infineon Technologies – Specifications

Infineon Technologies IPD65R420CFD is a IPD65R420CFD from Infineon Technologies, part of the MOSFETs. It is designed for 650V 8.7A 378mΩ@10V,3.4A 83.3W [email protected] 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 8.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 378mΩ@10V,3.4A
  • Power Dissipation (Pd): 83.3W
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 870pF@100V
  • Total Gate Charge (Qg@Vgs): 32nC@0~10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPD65R420CFD

Model NumberIPD65R420CFD
Model NameInfineon Technologies IPD65R420CFD
CategoryMOSFETs
BrandInfineon Technologies
Description650V 8.7A 378mΩ@10V,3.4A 83.3W [email protected] 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)8.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)378mΩ@10V,3.4A
Power Dissipation (Pd)83.3W
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)870pF@100V
Total Gate Charge (Qg@Vgs)32nC@0~10V
Operating Temperature-40℃~+150℃@(Tj)

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