IPD65R420CFDATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD65R420CFDATMA1 is a IPD65R420CFDATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 8.7A 420mΩ@3.4A,10V 83.3W 4.5V@300uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 8.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 420mΩ@3.4A,10V
  • Power Dissipation (Pd): 83.3W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@300uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 870pF@100V
  • Total Gate Charge (Qg@Vgs): 31.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPD65R420CFDATMA1

Full Specifications of IPD65R420CFDATMA1

Model NumberIPD65R420CFDATMA1
Model NameInfineon Technologies IPD65R420CFDATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description650V 8.7A 420mΩ@3.4A,10V 83.3W 4.5V@300uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)8.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)420mΩ@3.4A,10V
Power Dissipation (Pd)83.3W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@300uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)870pF@100V
Total Gate Charge (Qg@Vgs)31.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - IPD65R420CFDATMA1 With Other 200 Models

Related Models - IPD65R420CFDATMA1 Alternative

Scroll to Top