Infineon Technologies IPD65R660CFDA is a IPD65R660CFDA from Infineon Technologies, part of the MOSFETs. It is designed for 650V 6A 594mΩ@10V,3.2A 62.5W 4V@200uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 6A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 594mΩ@10V,3.2A
- Power Dissipation (Pd): 62.5W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@200uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 543pF@100V
- Total Gate Charge (Qg@Vgs): 20nC@0~10V
- Operating Temperature: -40℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.37 grams.
More on IPD65R660CFDA
Full Specifications of IPD65R660CFDA
Model Number | IPD65R660CFDA |
Model Name | Infineon Technologies IPD65R660CFDA |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 650V 6A 594mΩ@10V,3.2A 62.5W 4V@200uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.370 grams / 0.013051 oz |
Package / Case | TO-252-2 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 650V |
Continuous Drain Current (Id) | 6A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 594mΩ@10V,3.2A |
Power Dissipation (Pd) | 62.5W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@200uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 543pF@100V |
Total Gate Charge (Qg@Vgs) | 20nC@0~10V |
Operating Temperature | -40℃~+150℃@(Tj) |
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