IPD70N12S3L12ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD70N12S3L12ATMA1 is a IPD70N12S3L12ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 120V 70A 11.5mΩ@70A,10V 125W 2.4V@83uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 120V
  • Continuous Drain Current (Id): 70A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11.5mΩ@70A,10V
  • Power Dissipation (Pd): 125W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@83uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.55nF@25V
  • Total Gate Charge (Qg@Vgs): 77nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPD70N12S3L12ATMA1

Model NumberIPD70N12S3L12ATMA1
Model NameInfineon Technologies IPD70N12S3L12ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description120V 70A 11.5mΩ@70A,10V 125W 2.4V@83uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)120V
Continuous Drain Current (Id)70A
Drain Source On Resistance (RDS(on)@Vgs,Id)11.5mΩ@70A,10V
Power Dissipation (Pd)125W
Gate Threshold Voltage (Vgs(th)@Id)2.4V@83uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.55nF@25V
Total Gate Charge (Qg@Vgs)77nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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