IPD70P04P4L08ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD70P04P4L08ATMA1 is a IPD70P04P4L08ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 70A 7.8mΩ@70A,10V 75W 2.2V@120uA 1PCSPChannel TO-252-3-313 MOSFETs ROHS. This product comes in a TO-252-3-313 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 70A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.8mΩ@70A,10V
  • Power Dissipation (Pd): 75W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@120uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 5.43nF@25V
  • Total Gate Charge (Qg@Vgs): 92nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPD70P04P4L08ATMA1

Model NumberIPD70P04P4L08ATMA1
Model NameInfineon Technologies IPD70P04P4L08ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description40V 70A 7.8mΩ@70A,10V 75W 2.2V@120uA 1PCSPChannel TO-252-3-313 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3-313
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)70A
Drain Source On Resistance (RDS(on)@Vgs,Id)7.8mΩ@70A,10V
Power Dissipation (Pd)75W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@120uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)5.43nF@25V
Total Gate Charge (Qg@Vgs)92nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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