IPD70R1K4CEAUMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD70R1K4CEAUMA1 is a IPD70R1K4CEAUMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 700V 5.4A 53W 1.4Ω@1A,10V 3.5V@130uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 700V
  • Continuous Drain Current (Id): 5.4A
  • Power Dissipation (Pd): 53W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@1A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@130uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 225pF@100V
  • Total Gate Charge (Qg@Vgs): 10.5nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPD70R1K4CEAUMA1

Model NumberIPD70R1K4CEAUMA1
Model NameInfineon Technologies IPD70R1K4CEAUMA1
CategoryMOSFETs
BrandInfineon Technologies
Description700V 5.4A 53W 1.4Ω@1A,10V 3.5V@130uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)700V
Continuous Drain Current (Id)5.4A
Power Dissipation (Pd)53W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.4Ω@1A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@130uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)225pF@100V
Total Gate Charge (Qg@Vgs)10.5nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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