IPD70R1K4P7SAUMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD70R1K4P7SAUMA1 is a IPD70R1K4P7SAUMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 700V 4A 1.4Ω@700mA,10V 23W 3.5V@40uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 700V
  • Continuous Drain Current (Id): 4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@700mA,10V
  • Power Dissipation (Pd): 23W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@40uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 158pF@400V
  • Total Gate Charge (Qg@Vgs): 4.7nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.421 grams.

More on IPD70R1K4P7SAUMA1

Full Specifications of IPD70R1K4P7SAUMA1

Model NumberIPD70R1K4P7SAUMA1
Model NameInfineon Technologies IPD70R1K4P7SAUMA1
CategoryMOSFETs
BrandInfineon Technologies
Description700V 4A 1.4Ω@700mA,10V 23W 3.5V@40uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.421 grams / 0.01485 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)700V
Continuous Drain Current (Id)4A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.4Ω@700mA,10V
Power Dissipation (Pd)23W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@40uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)158pF@400V
Total Gate Charge (Qg@Vgs)4.7nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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