IPD75N04S406 by Infineon Technologies – Specifications

Infineon Technologies IPD75N04S406 is a IPD75N04S406 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 75A 5.9mΩ@75A,10V 58W 4V@26uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS. This product comes in a TO-252-3-313 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 75A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.9mΩ@75A,10V
  • Power Dissipation (Pd): 58W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@26uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.55nF@25V
  • Total Gate Charge (Qg@Vgs): 32nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.4 grams.

More on IPD75N04S406

Full Specifications of IPD75N04S406

Model NumberIPD75N04S406
Model NameInfineon Technologies IPD75N04S406
CategoryMOSFETs
BrandInfineon Technologies
Description40V 75A 5.9mΩ@75A,10V 58W 4V@26uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.400 grams / 0.01411 oz
Package / CaseTO-252-3-313
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)75A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.9mΩ@75A,10V
Power Dissipation (Pd)58W
Gate Threshold Voltage (Vgs(th)@Id)4V@26uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.55nF@25V
Total Gate Charge (Qg@Vgs)32nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Infineon Technologies - IPD75N04S406 With Other 200 Models

Related Models - IPD75N04S406 Alternative

Scroll to Top