IPD80R1K0CEATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD80R1K0CEATMA1 is a IPD80R1K0CEATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 5.7A 83W 950mΩ@3.6A,10V 3.9V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 5.7A
  • Power Dissipation (Pd): 83W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 950mΩ@3.6A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 785pF@100V
  • Total Gate Charge (Qg@Vgs): 31nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.4 grams.

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Full Specifications of IPD80R1K0CEATMA1

Model NumberIPD80R1K0CEATMA1
Model NameInfineon Technologies IPD80R1K0CEATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description800V 5.7A 83W 950mΩ@3.6A,10V 3.9V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.400 grams / 0.01411 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)5.7A
Power Dissipation (Pd)83W
Drain Source On Resistance (RDS(on)@Vgs,Id)950mΩ@3.6A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.9V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)785pF@100V
Total Gate Charge (Qg@Vgs)31nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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