IPD80R1K2P7 by Infineon Technologies – Specifications

Infineon Technologies IPD80R1K2P7 is a IPD80R1K2P7 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 4.5A 1Ω@10V,1.7A 37W 3V@800uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 4.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1Ω@10V,1.7A
  • Power Dissipation (Pd): 37W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@800uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 300pF@500V
  • Total Gate Charge (Qg@Vgs): 11nC@0~10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.483 grams.

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Full Specifications of IPD80R1K2P7

Model NumberIPD80R1K2P7
Model NameInfineon Technologies IPD80R1K2P7
CategoryMOSFETs
BrandInfineon Technologies
Description800V 4.5A 1Ω@10V,1.7A 37W 3V@800uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.483 grams / 0.017037 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)4.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)1Ω@10V,1.7A
Power Dissipation (Pd)37W
Gate Threshold Voltage (Vgs(th)@Id)3V@800uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)300pF@500V
Total Gate Charge (Qg@Vgs)11nC@0~10V
Operating Temperature-55℃~+150℃@(Tj)

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