Infineon Technologies IPD80R1K2P7 is a IPD80R1K2P7 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 4.5A 1Ω@10V,1.7A 37W 3V@800uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 800V
- Continuous Drain Current (Id): 4.5A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1Ω@10V,1.7A
- Power Dissipation (Pd): 37W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@800uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 300pF@500V
- Total Gate Charge (Qg@Vgs): 11nC@0~10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.483 grams.
More on IPD80R1K2P7
Full Specifications of IPD80R1K2P7
| Model Number | IPD80R1K2P7 |
| Model Name | Infineon Technologies IPD80R1K2P7 |
| Category | MOSFETs |
| Brand | Infineon Technologies |
| Description | 800V 4.5A 1Ω@10V,1.7A 37W 3V@800uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.483 grams / 0.017037 oz |
| Package / Case | TO-252-2 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 800V |
| Continuous Drain Current (Id) | 4.5A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1Ω@10V,1.7A |
| Power Dissipation (Pd) | 37W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@800uA |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 300pF@500V |
| Total Gate Charge (Qg@Vgs) | 11nC@0~10V |
| Operating Temperature | -55℃~+150℃@(Tj) |
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