IPD80R1K4P7 by Infineon Technologies – Specifications

Infineon Technologies IPD80R1K4P7 is a IPD80R1K4P7 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 4A 1.4Ω@10V,1.4A 32W 3.5V@700uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@10V,1.4A
  • Power Dissipation (Pd): 32W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@700uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 250pF@500V
  • Total Gate Charge (Qg@Vgs): 10nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.43 grams.

More on IPD80R1K4P7

Full Specifications of IPD80R1K4P7

Model NumberIPD80R1K4P7
Model NameInfineon Technologies IPD80R1K4P7
CategoryMOSFETs
BrandInfineon Technologies
Description800V 4A 1.4Ω@10V,1.4A 32W 3.5V@700uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.430 grams / 0.015168 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)4A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.4Ω@10V,1.4A
Power Dissipation (Pd)32W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@700uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)250pF@500V
Total Gate Charge (Qg@Vgs)10nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - IPD80R1K4P7 With Other 200 Models

Related Models - IPD80R1K4P7 Alternative

Scroll to Top