IPD80R1K4P7ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD80R1K4P7ATMA1 is a IPD80R1K4P7ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 4A 32W 1.4Ω@1.4A,10V 3.5V@700uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 4A
  • Power Dissipation (Pd): 32W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@1.4A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@700uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 250pF@500V
  • Total Gate Charge (Qg@Vgs): 10nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.7 grams.

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Full Specifications of IPD80R1K4P7ATMA1

Model NumberIPD80R1K4P7ATMA1
Model NameInfineon Technologies IPD80R1K4P7ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description800V 4A 32W 1.4Ω@1.4A,10V 3.5V@700uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.700 grams / 0.024692 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)4A
Power Dissipation (Pd)32W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.4Ω@1.4A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@700uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)250pF@500V
Total Gate Charge (Qg@Vgs)10nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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