IPD80R2K7C3AATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD80R2K7C3AATMA1 is a IPD80R2K7C3AATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 2A 2.7Ω@1.2A,10V 42W 3.9V@250uA 1PCSNChannel DPAK MOSFETs ROHS. This product comes in a DPAK package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.7Ω@1.2A,10V
  • Power Dissipation (Pd): 42W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 290pF@100V
  • Total Gate Charge (Qg@Vgs): 1.5nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPD80R2K7C3AATMA1

Full Specifications of IPD80R2K7C3AATMA1

Model NumberIPD80R2K7C3AATMA1
Model NameInfineon Technologies IPD80R2K7C3AATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description800V 2A 2.7Ω@1.2A,10V 42W 3.9V@250uA 1PCSNChannel DPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDPAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)2A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.7Ω@1.2A,10V
Power Dissipation (Pd)42W
Gate Threshold Voltage (Vgs(th)@Id)3.9V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)290pF@100V
Total Gate Charge (Qg@Vgs)1.5nC@10V
Operating Temperature-40℃~+150℃@(Tj)

Compare Infineon Technologies - IPD80R2K7C3AATMA1 With Other 200 Models

Related Models - IPD80R2K7C3AATMA1 Alternative

Scroll to Top