IPD80R2K8CEATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD80R2K8CEATMA1 is a IPD80R2K8CEATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 1.9A 2.8Ω@1.1A,10V 42W 3.9V@120uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 800V
• Continuous Drain Current (Id): 1.9A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 2.8Ω@1.1A,10V
• Power Dissipation (Pd): 42W
• Gate Threshold Voltage (Vgs(th)@Id): 3.9V@120uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 290pF@100V
• Total Gate Charge (Qg@Vgs): 12nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.35 grams.