IPD80R600P7 by Infineon Technologies – Specifications

Infineon Technologies IPD80R600P7 is a IPD80R600P7 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 8A 60W 600mΩ@10V,3.4A 3.5V@170uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 8A
  • Power Dissipation (Pd): 60W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 600mΩ@10V,3.4A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@170uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.47 grams.

Full Specifications of IPD80R600P7

Model NumberIPD80R600P7
Model NameInfineon Technologies IPD80R600P7
CategoryMOSFETs
BrandInfineon Technologies
Description800V 8A 60W 600mΩ@10V,3.4A 3.5V@170uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.470 grams / 0.016579 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)8A
Power Dissipation (Pd)60W
Drain Source On Resistance (RDS(on)@Vgs,Id)600mΩ@10V,3.4A
Gate Threshold Voltage (Vgs(th)@Id)3.5V@170uA
Type1PCSNChannel

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