IPD90N10S4L06ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD90N10S4L06ATMA1 is a IPD90N10S4L06ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 90A 136W 6.6mΩ@90A,10V 2.1V@90uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 90A
  • Power Dissipation (Pd): 136W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.6mΩ@90A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.1V@90uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.25nF@25V
  • Total Gate Charge (Qg@Vgs): 98nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.59 grams.

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Full Specifications of IPD90N10S4L06ATMA1

Model NumberIPD90N10S4L06ATMA1
Model NameInfineon Technologies IPD90N10S4L06ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description100V 90A 136W 6.6mΩ@90A,10V 2.1V@90uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.590 grams / 0.020812 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)90A
Power Dissipation (Pd)136W
Drain Source On Resistance (RDS(on)@Vgs,Id)6.6mΩ@90A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.1V@90uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.25nF@25V
Total Gate Charge (Qg@Vgs)98nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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