IPD90R1K2C3 by Infineon Technologies – Specifications

Infineon Technologies IPD90R1K2C3 is a IPD90R1K2C3 from Infineon Technologies, part of the MOSFETs. It is designed for 900V 5.1A 83W 1.2Ω@10V,2.8A 3.5V@310uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 900V
  • Continuous Drain Current (Id): 5.1A
  • Power Dissipation (Pd): 83W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2Ω@10V,2.8A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@310uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.25 grams.

More on IPD90R1K2C3

Full Specifications of IPD90R1K2C3

Model NumberIPD90R1K2C3
Model NameInfineon Technologies IPD90R1K2C3
CategoryMOSFETs
BrandInfineon Technologies
Description900V 5.1A 83W 1.2Ω@10V,2.8A 3.5V@310uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.250 grams / 0.008819 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)900V
Continuous Drain Current (Id)5.1A
Power Dissipation (Pd)83W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.2Ω@10V,2.8A
Gate Threshold Voltage (Vgs(th)@Id)3.5V@310uA
Type1PCSNChannel

Compare Infineon Technologies - IPD90R1K2C3 With Other 200 Models

Related Models - IPD90R1K2C3 Alternative

Scroll to Top