IPD95R450P7ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD95R450P7ATMA1 is a IPD95R450P7ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 950V 14A 104W 450mΩ@7.2A,10V 3.5V@360uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 950V
  • Continuous Drain Current (Id): 14A
  • Power Dissipation (Pd): 104W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 450mΩ@7.2A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@360uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.053nF@400V
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.6 grams.

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Full Specifications of IPD95R450P7ATMA1

Model NumberIPD95R450P7ATMA1
Model NameInfineon Technologies IPD95R450P7ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description950V 14A 104W 450mΩ@7.2A,10V 3.5V@360uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.600 grams / 0.021164 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)950V
Continuous Drain Current (Id)14A
Power Dissipation (Pd)104W
Drain Source On Resistance (RDS(on)@Vgs,Id)450mΩ@7.2A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@360uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.053nF@400V
Total Gate Charge (Qg@Vgs)35nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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