IPDD60R055CFD7XTMA1 by Infineon Technologies – Specifications

Infineon Technologies IPDD60R055CFD7XTMA1 is a IPDD60R055CFD7XTMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 52A 55mΩ@15.1A,10V 329W 4.5V@760uA 1PCSNChannel HDSOP-10 MOSFETs ROHS. This product comes in a HDSOP-10 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 52A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 55mΩ@15.1A,10V
  • Power Dissipation (Pd): 329W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@760uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.724nF@400V
  • Total Gate Charge (Qg@Vgs): 67nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPDD60R055CFD7XTMA1

Full Specifications of IPDD60R055CFD7XTMA1

Model NumberIPDD60R055CFD7XTMA1
Model NameInfineon Technologies IPDD60R055CFD7XTMA1
CategoryMOSFETs
BrandInfineon Technologies
Description600V 52A 55mΩ@15.1A,10V 329W 4.5V@760uA 1PCSNChannel HDSOP-10 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseHDSOP-10
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)52A
Drain Source On Resistance (RDS(on)@Vgs,Id)55mΩ@15.1A,10V
Power Dissipation (Pd)329W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@760uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.724nF@400V
Total Gate Charge (Qg@Vgs)67nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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