IPG16N10S461ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPG16N10S461ATMA1 is a IPG16N10S461ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 16A 61mΩ@16A,10V 29W 3.5V@9uA 2 N-Channel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 16A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 61mΩ@16A,10V
  • Power Dissipation (Pd): 29W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@9uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 490pF@25V
  • Total Gate Charge (Qg@Vgs): 7nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.145 grams.

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Full Specifications of IPG16N10S461ATMA1

Model NumberIPG16N10S461ATMA1
Model NameInfineon Technologies IPG16N10S461ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description100V 16A 61mΩ@16A,10V 29W 3.5V@9uA 2 N-Channel TDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.145 grams / 0.005115 oz
Package / CaseTDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)16A
Drain Source On Resistance (RDS(on)@Vgs,Id)61mΩ@16A,10V
Power Dissipation (Pd)29W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@9uA
Reverse Transfer Capacitance (Crss@Vds)-
Type2 N-Channel
Input Capacitance (Ciss@Vds)490pF@25V
Total Gate Charge (Qg@Vgs)7nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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