IPG20N04S4L18AATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPG20N04S4L18AATMA1 is a IPG20N04S4L18AATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 20A 26W 18mΩ@17A,10V 2.2V@8uA 2 N-Channel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 20A
  • Power Dissipation (Pd): 26W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 18mΩ@17A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@8uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 1.071nF@25V
  • Total Gate Charge (Qg@Vgs): 15nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPG20N04S4L18AATMA1

Full Specifications of IPG20N04S4L18AATMA1

Model NumberIPG20N04S4L18AATMA1
Model NameInfineon Technologies IPG20N04S4L18AATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description40V 20A 26W 18mΩ@17A,10V 2.2V@8uA 2 N-Channel TDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)20A
Power Dissipation (Pd)26W
Drain Source On Resistance (RDS(on)@Vgs,Id)18mΩ@17A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@8uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)1.071nF@25V
Total Gate Charge (Qg@Vgs)15nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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