IPI075N15N3 G by Infineon Technologies – Specifications

Infineon Technologies IPI075N15N3 G is a IPI075N15N3 G from Infineon Technologies, part of the MOSFETs. It is designed for 150V 100A 6.2mΩ@10V,100A 300W 3V@270uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.2mΩ@10V,100A
  • Power Dissipation (Pd): 300W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@270uA
  • Reverse Transfer Capacitance (Crss@Vds): 10pF@75V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.47nF@75V
  • Total Gate Charge (Qg@Vgs): 70nC@0~10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPI075N15N3 G

Model NumberIPI075N15N3 G
Model NameInfineon Technologies IPI075N15N3 G
CategoryMOSFETs
BrandInfineon Technologies
Description150V 100A 6.2mΩ@10V,100A 300W 3V@270uA 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)100A
Drain Source On Resistance (RDS(on)@Vgs,Id)6.2mΩ@10V,100A
Power Dissipation (Pd)300W
Gate Threshold Voltage (Vgs(th)@Id)3V@270uA
Reverse Transfer Capacitance (Crss@Vds)10pF@75V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.47nF@75V
Total Gate Charge (Qg@Vgs)70nC@0~10V
Operating Temperature-55℃~+175℃@(Tj)

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