IPI076N12N3 G by Infineon Technologies – Specifications

Infineon Technologies IPI076N12N3 G is a IPI076N12N3 G from Infineon Technologies, part of the MOSFETs. It is designed for 120V 100A 6.5mΩ@10V,100A 188W 3V@130uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 120V
  • Continuous Drain Current (Id): 100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.5mΩ@10V,100A
  • Power Dissipation (Pd): 188W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@130uA
  • Reverse Transfer Capacitance (Crss@Vds): 31pF@60V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.99nF@60V
  • Total Gate Charge (Qg@Vgs): 76nC@0~10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPI076N12N3 G

Model NumberIPI076N12N3 G
Model NameInfineon Technologies IPI076N12N3 G
CategoryMOSFETs
BrandInfineon Technologies
Description120V 100A 6.5mΩ@10V,100A 188W 3V@130uA 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)120V
Continuous Drain Current (Id)100A
Drain Source On Resistance (RDS(on)@Vgs,Id)6.5mΩ@10V,100A
Power Dissipation (Pd)188W
Gate Threshold Voltage (Vgs(th)@Id)3V@130uA
Reverse Transfer Capacitance (Crss@Vds)31pF@60V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.99nF@60V
Total Gate Charge (Qg@Vgs)76nC@0~10V
Operating Temperature-55℃~+175℃@(Tj)

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