IPI120N04S4-02 by Infineon Technologies – Specifications

Infineon Technologies IPI120N04S4-02 is a IPI120N04S4-02 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 120A 2.1mΩ@10V,100A 158W 4V@110uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 120A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.1mΩ@10V,100A
  • Power Dissipation (Pd): 158W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@110uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPI120N04S4-02

Full Specifications of IPI120N04S4-02

Model NumberIPI120N04S4-02
Model NameInfineon Technologies IPI120N04S4-02
CategoryMOSFETs
BrandInfineon Technologies
Description40V 120A 2.1mΩ@10V,100A 158W 4V@110uA 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)120A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.1mΩ@10V,100A
Power Dissipation (Pd)158W
Gate Threshold Voltage (Vgs(th)@Id)4V@110uA
Type1PCSNChannel

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