IPI120N04S402AKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPI120N04S402AKSA1 is a IPI120N04S402AKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 120A 2.1mΩ@10V,100A 158W 4V@110uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 120A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 2.1mΩ@10V,100A
• Power Dissipation (Pd): 158W
• Gate Threshold Voltage (Vgs(th)@Id): 4V@110uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 10.74nF@25V
• Total Gate Charge (Qg@Vgs): 134nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.