IPI126N10N3G by Infineon Technologies – Specifications

Infineon Technologies IPI126N10N3G is a IPI126N10N3G from Infineon Technologies, part of the MOSFETs. It is designed for 100V 58A 12.6mΩ@46A,10V 94W 3.5V@46uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 58A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12.6mΩ@46A,10V
  • Power Dissipation (Pd): 94W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@46uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.5nF@50V
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPI126N10N3G

Model NumberIPI126N10N3G
Model NameInfineon Technologies IPI126N10N3G
CategoryMOSFETs
BrandInfineon Technologies
Description100V 58A 12.6mΩ@46A,10V 94W 3.5V@46uA 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)58A
Drain Source On Resistance (RDS(on)@Vgs,Id)12.6mΩ@46A,10V
Power Dissipation (Pd)94W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@46uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.5nF@50V
Total Gate Charge (Qg@Vgs)35nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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