Infineon Technologies IPI22N03S4L-15 is a IPI22N03S4L-15 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 22A 14.9mΩ@22A,10V 31W 2.2V@10uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS. This product comes in a TO-262-3-1 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 22A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 14.9mΩ@22A,10V
- Power Dissipation (Pd): 31W
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@10uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 980pF@25V
- Total Gate Charge (Qg@Vgs): 14nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IPI22N03S4L-15
Full Specifications of IPI22N03S4L-15
Model Number | IPI22N03S4L-15 |
Model Name | Infineon Technologies IPI22N03S4L-15 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 30V 22A 14.9mΩ@22A,10V 31W 2.2V@10uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-262-3-1 |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 22A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 14.9mΩ@22A,10V |
Power Dissipation (Pd) | 31W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.2V@10uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 980pF@25V |
Total Gate Charge (Qg@Vgs) | 14nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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