IPI320N203G by Infineon Technologies – Specifications

Infineon Technologies IPI320N203G is a IPI320N203G from Infineon Technologies, part of the MOSFETs. It is designed for 200V 34A 136W 32mΩ@34A,10V 4V@90uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 34A
  • Power Dissipation (Pd): 136W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 32mΩ@34A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@90uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.35nF@100V
  • Total Gate Charge (Qg@Vgs): 29nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPI320N203G

Model NumberIPI320N203G
Model NameInfineon Technologies IPI320N203G
CategoryMOSFETs
BrandInfineon Technologies
Description200V 34A 136W 32mΩ@34A,10V 4V@90uA 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)34A
Power Dissipation (Pd)136W
Drain Source On Resistance (RDS(on)@Vgs,Id)32mΩ@34A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@90uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.35nF@100V
Total Gate Charge (Qg@Vgs)29nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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