IPI45N06S4-09AKSA2 by Infineon Technologies – Specifications

Infineon Technologies IPI45N06S4-09AKSA2 is a IPI45N06S4-09AKSA2 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 45A 9.4mΩ@45A,10V 71W 4V@34uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS. This product comes in a TO-262-3-1 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 45A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.4mΩ@45A,10V
  • Power Dissipation (Pd): 71W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@34uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.785nF@25V
  • Total Gate Charge (Qg@Vgs): 47nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPI45N06S4-09AKSA2

Full Specifications of IPI45N06S4-09AKSA2

Model NumberIPI45N06S4-09AKSA2
Model NameInfineon Technologies IPI45N06S4-09AKSA2
CategoryMOSFETs
BrandInfineon Technologies
Description60V 45A 9.4mΩ@45A,10V 71W 4V@34uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3-1
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)45A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.4mΩ@45A,10V
Power Dissipation (Pd)71W
Gate Threshold Voltage (Vgs(th)@Id)4V@34uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.785nF@25V
Total Gate Charge (Qg@Vgs)47nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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