IPI50R299CP by Infineon Technologies – Specifications

Infineon Technologies IPI50R299CP is a IPI50R299CP from Infineon Technologies, part of the MOSFETs. It is designed for 500V 12A 104W 299mΩ@6.6A,10V 3.5V@440uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS. This product comes in a TO-262-3-1 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 12A
  • Power Dissipation (Pd): 104W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 299mΩ@6.6A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@440uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.19nF@100V
  • Total Gate Charge (Qg@Vgs): 31nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPI50R299CP

Full Specifications of IPI50R299CP

Model NumberIPI50R299CP
Model NameInfineon Technologies IPI50R299CP
CategoryMOSFETs
BrandInfineon Technologies
Description500V 12A 104W 299mΩ@6.6A,10V 3.5V@440uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3-1
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)12A
Power Dissipation (Pd)104W
Drain Source On Resistance (RDS(on)@Vgs,Id)299mΩ@6.6A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@440uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.19nF@100V
Total Gate Charge (Qg@Vgs)31nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - IPI50R299CP With Other 200 Models

Related Models - IPI50R299CP Alternative

Scroll to Top