IPI530N15N3 G by Infineon Technologies – Specifications

Infineon Technologies IPI530N15N3 G is a IPI530N15N3 G from Infineon Technologies, part of the MOSFETs. It is designed for 150V 21A 68W 53mΩ@10V,18A 4V@35uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 21A
  • Power Dissipation (Pd): 68W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 53mΩ@10V,18A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@35uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPI530N15N3 G

Full Specifications of IPI530N15N3 G

Model NumberIPI530N15N3 G
Model NameInfineon Technologies IPI530N15N3 G
CategoryMOSFETs
BrandInfineon Technologies
Description150V 21A 68W 53mΩ@10V,18A 4V@35uA 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)21A
Power Dissipation (Pd)68W
Drain Source On Resistance (RDS(on)@Vgs,Id)53mΩ@10V,18A
Gate Threshold Voltage (Vgs(th)@Id)4V@35uA
Type1PCSNChannel

Compare Infineon Technologies - IPI530N15N3 G With Other 200 Models

Related Models - IPI530N15N3 G Alternative

Scroll to Top