Infineon Technologies IPI60R125CP is a IPI60R125CP from Infineon Technologies, part of the MOSFETs. It is designed for 600V 25A 125mΩ@16A,10V 208W [email protected] 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 25A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 125mΩ@16A,10V
- Power Dissipation (Pd): 208W
- Gate Threshold Voltage (Vgs(th)@Id): [email protected]
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.5nF@100V
- Total Gate Charge (Qg@Vgs): 70nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IPI60R125CP
Full Specifications of IPI60R125CP
Model Number | IPI60R125CP |
Model Name | Infineon Technologies IPI60R125CP |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 600V 25A 125mΩ@16A,10V 208W [email protected] 1PCSNChannel TO-262-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-262-3 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 600V |
Continuous Drain Current (Id) | 25A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 125mΩ@16A,10V |
Power Dissipation (Pd) | 208W |
Gate Threshold Voltage (Vgs(th)@Id) | [email protected] |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.5nF@100V |
Total Gate Charge (Qg@Vgs) | 70nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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