IPI60R125CP by Infineon Technologies – Specifications

Infineon Technologies IPI60R125CP is a IPI60R125CP from Infineon Technologies, part of the MOSFETs. It is designed for 600V 25A 125mΩ@16A,10V 208W [email protected] 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 25A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 125mΩ@16A,10V
  • Power Dissipation (Pd): 208W
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.5nF@100V
  • Total Gate Charge (Qg@Vgs): 70nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IPI60R125CP

Model NumberIPI60R125CP
Model NameInfineon Technologies IPI60R125CP
CategoryMOSFETs
BrandInfineon Technologies
Description600V 25A 125mΩ@16A,10V 208W [email protected] 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)25A
Drain Source On Resistance (RDS(on)@Vgs,Id)125mΩ@16A,10V
Power Dissipation (Pd)208W
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.5nF@100V
Total Gate Charge (Qg@Vgs)70nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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