IPI60R250CP by Infineon Technologies – Specifications

Infineon Technologies IPI60R250CP is a IPI60R250CP from Infineon Technologies, part of the MOSFETs. It is designed for 600V 12A 104W 250mΩ@7.8A,10V 3.5V@520uA 1PCSNChannel TO-262 MOSFETs ROHS. This product comes in a TO-262 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 12A
  • Power Dissipation (Pd): 104W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 250mΩ@7.8A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@520uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.2nF@100V
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPI60R250CP

Model NumberIPI60R250CP
Model NameInfineon Technologies IPI60R250CP
CategoryMOSFETs
BrandInfineon Technologies
Description600V 12A 104W 250mΩ@7.8A,10V 3.5V@520uA 1PCSNChannel TO-262 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)12A
Power Dissipation (Pd)104W
Drain Source On Resistance (RDS(on)@Vgs,Id)250mΩ@7.8A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@520uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.2nF@100V
Total Gate Charge (Qg@Vgs)35nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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